unisonic technologies co., ltd utm4953 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-293.b dual p-channel enhancement mode ? description the utm4953 uses advanced utc technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) <60m ? @v gs =-10v * r ds(on) <95m ? @v gs =-4.5v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol (7) (8) d1 (4) g2 (2) g1 s1 (1) s2 (3) (5) (6) d2 sop-8 ? ordering information ordering number package packing lead free halogen free utm4953l-s08-r UTM4953G-S08-R sop-8 tape reel
utm4953 power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-293.b ? pin configuration
utm4953 power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-293.b ? absolute maximum ratings (t a =25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -30 v gate-source voltage v gss 25 v drain current continuous i d -4.9 a pulsed i dm -30 power dissipation p d 2.5 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 50 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250a -30 v zero gate voltage drain current i dss v ds =-24v, v gs =0v -1 a gate-body leakage current i gss v ds =0v, v gs =25v 100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-250a -1 -1.5 -2 v static drain-source on-resistance r ds(on) v gs =-10v, i d =-4.9a 53 60 m ? v gs =-4.5v, i d =-3.6a 80 95 dynamic parameters input capacitance c iss v ds =-25v, v gs =0v, f=1.0mhz 1260 pf output capacitance c oss 340 pf reverse transfer capacitance c rss 220 pf switching parameters (note) turn-on delay time t d ( on ) v gen =-10v, v dd =-15v, r l =7.5 ? , r g =6 ? , i d =-2a 10 18 ns turn-on rise time t r 15 20 ns turn-off delay time t d ( off ) 22 38 ns turn-off fall-time t f 15 25 ns total gate charge q g v ds =-15v, v gs =-10v, i d =-4.6a 22.3 29 nc gate source charge q gs 4.65 nc gate drain charge q gd 2 nc source- drain diode ratings and characteristics diode forward voltage v sd i sd =-1.7a, v gs =0v -0.7 -1.3 v note: pulse width Q 300s, duty cycle Q 2%
utm4953 power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-293.b ? typical characteristics drain-source on resistance on-resistance,r ds(on) (m ? ) gate-source voltage,v gs (v) 46 0 0 10 40 20 30 10 8 50 60 2 i d =4.9a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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